Selective growth of α-sexithiophene by using silicon oxides patterns

International Journal of Molecular Sciences

Volumn 12, Issue 9, 2011, Pages 5719-5735

  Albonetti, Cristiano ^a   Barbalinardo, Marianna ^a   Milita, Silvia ^b   Cavallini, Massimiliano ^a   Liscio, Fabiola ^b   Moulin, Jean François ^c   Biscarini, Fabio ^a  

^a CNR   (Italy)

^b CNR Consiglio Nazionale delle Ricerche   (Italy)

^c INSTITUTE OF MATERIALS RESEARCH   (Germany)

Author keywords

Annealing; Atomic force microscopy; Pattern; Sexithiophene; Template

Indexed keywords

ALPHA SEXITHIOPHENE; OXIDE; SILICON OXIDE; THIOPHENE; UNCLASSIFIED DRUG; FUSED HETEROCYCLIC RINGS; NANOMATERIAL; SEXITHIOPHENE; SILICON DERIVATIVE; THIOPHENE DERIVATIVE;

ARTICLE; ATOMIC FORCE MICROSCOPY; CHEMICAL REACTION KINETICS; CHEMICAL STRUCTURE; CONTROLLED STUDY; IMAGE ANALYSIS; INTERMETHOD COMPARISON; MOLECULAR DYNAMICS; MOLECULAR WEIGHT; NANOFABRICATION; OXIDATION; PARTICLE SIZE; RADIATION SCATTERING; SURFACE PROPERTY; THERMAL ANALYSIS; THERMOSTABILITY; X RAY DIFFRACTION; CHEMISTRY; ELECTROSTIMULATION; OXIDATION REDUCTION REACTION; SMALL ANGLE SCATTERING; THERMODYNAMICS; X RAY CRYSTALLOGRAPHY;

CRYSTALLOGRAPHY, X-RAY; ELECTRIC STIMULATION; HETEROCYCLIC COMPOUNDS WITH 4 OR MORE RINGS; MICROSCOPY, ATOMIC FORCE; NANOSTRUCTURES; OXIDATION-REDUCTION; OXIDES; SCATTERING, SMALL ANGLE; SILICON COMPOUNDS; SURFACE PROPERTIES; THERMODYNAMICS; THIOPHENES; X-RAY DIFFRACTION;

EID: 80053200423     PISSN: None     EISSN: 14220067     Source Type: Journal    
DOI: 10.3390/ijms12095719     Document Type: Article

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