Sub-50 nm positioning of organic compounds onto silicon oxide patterns fabricated by local oxidation nanolithography

Nanotechnology

Volumn 19, Issue 45, 2008, Pages

  Losilla, N S ^a   Oxtoby, N S ^b   Martinez, J ^a   Garcia, F ^a   Garcia, R ^a   Mas Torrent, M ^b   Veciana, J ^b   Rovira, C ^b  

^a INSTITUTO DE MICROELECTRÓNICA DE MADRID   (Spain)

^b INSTITUT DE CIÈNCIA DE MATERIALS DE BARCELONA ICMAB CSIC   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

FLOW INTERACTIONS; IONIZATION OF LIQUIDS; NANOLITHOGRAPHY; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; ORGANIC COMPOUNDS; OXIDATION; OXIDES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICA;

BOTTOM-UP; DO-MAINS; ELECTROSTATIC INTERACTIONS; GAP SEPARATIONS; LIQUID SOLUTIONS; LOCAL OXIDATIONS; NANOPATTERNS; NANOSCALE; NANOSCALE REGIONS; NM POSITIONING; SEMI-CONDUCTORS; SILICON CHIPS; SILICON DIOXIDES; SILICON OXIDES; TETRATHIAFULVALENE; TOP DOWNS;

SILICON COMPOUNDS;

NANOMATERIAL; NANOPARTICLE; SILICON; SILICON DERIVATIVE; TETRATHIAFULVALENE DERIVATIVE;

ACCURACY; ARTICLE; CONTROLLED STUDY; ELECTRICITY; MOLECULAR INTERACTION; OXIDATION; PRIORITY JOURNAL; PRODUCT DEVELOPMENT; SEMICONDUCTOR; SYNTHESIS;

EID: 58149232439     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/45/455308     Document Type: Article

References (46)

1. Facchetti A 2007 Mater. Today 10 28
2. Reese C and Bao Z 2007 Mater. Today 10 20
3. Stutzmann N, Friend R H and Sirringhaus H 2003 Science 299 1881
4. Dinelli F, Murgia M, Cavallini M, Levy P, Biscarini F and De Leeuw D M 2004 Phys. Rev. Lett. 92 116802
5. Sotomayor Torres C M 2003 Alternative Lithography (New York: Kluwer Academic/Plenum)
6. Geissler M and Xia Y N 2004 Adv. Mater. 16 1249
7. Garcia R, Tello M, Moulin J F and Biscarini F 2004 Nano Lett. 4 1115
8. Cui Y, Bjoerk M T, Liddle J A, Soennichsen C, Boussert B and Alivisatos A P 2004 Nano Lett. 4 1093
9. Barry C R, Gu J and Jacobs H O 2005 Nano Lett. 5 2078
10. Lenhert S, Sun P, Wang Y H, Fuchs H and Mirkin C A 2007 Small 3 71
11. Mesquida P and Stemmer A 2001 Adv. Mater. 13 1395
12. Li D, Ouyang G, McCann J T and Xia Y N 2005 Nano Lett. 5 913
13. Klauk H (ed) 2006 Organic Electronics Materials Manufacturing Applications (Weinheim: Wiley-VCH)
14. Forrest S R and Thompson M E 2007 Chem. Rev. 107 923
15. Rotzoll R, Mohapatra S, Olariu V, Wenz R, Grigas M, Dimmler K, Shchekin O and Dodabalapur A 2006 Appl. Phys. Lett. 88 123502
16. Gelinck G H et al 2004 Nat. Mater. 3 106
17. Lee S, Koo B, Park J G, Moon H, Hahn J and Kim J M 2006 MRS Bull. 31 455
18. Mas-Torrent M, Durkut M, Hadley P, Ribas X and Rovira C 2004 J. Am. Chem. Soc. 126 984
19. Mas-Torrent M, Hadley P, Bromley S T, Ribas X, Tarrés J, Mas M, Molins E, Veciana J and Rovira C 2004 J. Am. Chem. Soc. 126 8546
20. Naraso Nishida J I, Ando S, Yamaguchi J, Itaka K, Koinuma H, Tada H, Tokito S and Yamashita Y 2005 J. Am. Chem. Soc. 127 10142
21. Mas-Torrent M and Rovira C 2006 J. Mater. Chem. 16 433
22. Gao X K, Wu W P, Liu Y Q, Qiu W F, Sun X B, Yu G and Zhu D B 2006 Chem. Commun. 2750
23. Miskiewicz P et al 2006 Chem. Mater. 18 4274
24. Yamada J-I and Sugimoto T 2005 TTF Chemistry, Fundamentals and Applications of Tetrathiafulvalene (Kodanska: Springer)
25. Wang C, Zhang D and Zhu D 2005 J. Am. Chem. Soc. 127 16372
26. Akutagawa T, Kakiuchi K, Hasegawa T, Noro S, Nakamura T, Hasegawa H, Mashiko S and Becher J 2005 Angew. Chem. Int. Edn 44 7283
27. Crivillers N, Mas-Torrent M, Bromley S, Wurst K, Veciana J and Rovira C 2007 ChemPhysChem 8 1565
28. Puigmarti-Luis J, Minoia A, Uji-i H, Rovira C, Cornil J, De Feyter S, Lazzaroni R and Amabilino D B 2006 J. Am. Chem. Soc. 128 12602
29. Garcia R, Martinez R V and Martinez J 2006 Chem. Soc. Rev. 35 29
30. Xie X N, Chung H J, Sow C H and Wee A T S 2006 Mater. Sci. Eng. R 5 1
31. Wouters D and Schubert U S 2004 Angew. Chem. Int. Edn 43 2480
32. Kinser C R, Schmitz M J and Hersam M C 2006 Adv. Mater. 18 1377
33. Orians A, Clemons C B, Golovaty D and Young G W 2006 Surf. Sci. 600 3297
34. Tseng A A, Notargiacomo A and Chen T P 2005 J. Vac. Sci. Technol. 23 877
35. Martinez J, Losilla N S, Biscarini F, Schmidt G, Borzenko T, Molenkamp L W and Garcia R 2006 Rev. Sci. Instrum. 77 086106
36. Hoeppener S, Maoz R and Sagiv J 2003 Nano Lett. 3 761
37. Martinez R V, Garcia F, Garcia R, Coronado E, Forment-Aliaga A, Romero F M and Tatay S 2007 Adv. Mater. 19 291
38. Fresco Z M and Frechet J M J 2005 J. Am. Chem. Soc. 127 8302
39. Yoshinobu T, Suzuki J, Kurooka H, Moon W C and Iwasaki H 2003 Electrochim. Acta 48 3131
40. Chen C F, Tzen S D, Lin M H and Gwo S 2006 Langmuir 22 7819
41. Liu S, Maoz R and Sagiv J 2004 Nano Lett. 4 845
42. Calleja M and Garcia R 2000 Appl. Phys. Lett. 76 3427
43. Garcia R, Tamayo J and San Paulo A 1999 Surf. Interface Anal. 27 312
44. Dagata J A, Perez-Murano F, Martin C, Kuramochi H and Yokoama H 2004 J. Appl. Phys. 96 2386
45. Zhu Q-Y, Lin H-H, Dai J, Bian G-Q, Zhang Y and Lu W 2006 New J. Chem. 30 1140
46. Keller D 1991 Surf. Sci. 253 353