Novel prevention method of stiction using silicon anodization for SOI structure

Sensors and Actuators, A: Physical

Volumn 72, Issue 2, 1999, Pages 153-159

  Matsumoto, Y ^a,b,c   Shimada, T ^a,b   Ishida, M ^a,b,d  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

^b Tohoku University ^*

^c TOHOKU UNIVERSITY   (Japan)

^d KYOTO UNIVERSITY   (Japan)

Author keywords

73 HF; Fractal; Silicon anodization; SOI; Stiction; Water contact angle

Indexed keywords

ALUMINUM; ANODIC OXIDATION; CONTACT ANGLE; FRACTALS; HYDROFLUORIC ACID; METALLIZING; NANOSTRUCTURED MATERIALS; SILICON ON INSULATOR TECHNOLOGY; STICTION; SURFACE ROUGHNESS;

STICTION PREVENTION;

SILICON SENSORS;

EID: 0032714562     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(98)00229-5     Document Type: Article

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