Effect of moisture on the frequency-dependent current of an AlGaN/GaN high-electron-mobility transistor

Japanese Journal of Applied Physics

Volumn 50, Issue 9 PART 1, 2011, Pages

  Kim, Jeong Jin ^a   Yang, Gye Mo ^a   Shim, Kyu Hwan ^a   Yang, Jeon Wook ^a  

^a Chonbuk National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; ALGAN/GAN HIGH ELECTRON-MOBILITY TRANSISTORS; CHARGED TRAPS; CURRENT DEGRADATION; DRAIN VOLTAGE; DUTY CYCLES; FREQUENCY-DEPENDENT; GATE VOLTAGES; PULSED OPERATION;

GALLIUM NITRIDE; MOISTURE;

DRAIN CURRENT;

EID: 80052979771     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.096501     Document Type: Article

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