Influence of crystalline quality of low-temperature GaN cap layer on current collapse in AlGaN/GaN heterostructure field-effect transistors

Applied Physics Letters

Volumn 92, Issue 10, 2008, Pages

  Waki, E ^a   Deguchi, T ^a   Nakagawa, A ^a   Egawa, T ^b  

^a JAPAN RADIO CO LTD   (Japan)

^b NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; ELECTRON DIFFRACTION; GALLIUM NITRIDE; GROWTH TEMPERATURE; HETEROJUNCTIONS; X RAY DIFFRACTION;

CRYSTALLINE QUALITY; CURRENT COLLAPSE; HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 40849136400     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2896311     Document Type: Article

References (7)

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