Correlation between DC-RF dispersion and gate leakage in deeply recessed GaN/AlGaN/GaN HEMTs

IEEE Electron Device Letters

Volumn 29, Issue 4, 2008, Pages 303-305

  Chu, Rongming ^a   Shen, Likum ^a   Fichtenbaum, Nicholas ^a   Chen, Zhen ^a   Keller, Stacia ^a   DenBaars, Steven P ^a   Mishra, Umesh K ^a  

^a University of California   (United States)

Author keywords

Current collapse; Dispersion; GaN; Leakage; Surface charging; Transistor

Indexed keywords

GATES (TRANSISTOR); LEAKAGE CURRENTS; SEMICONDUCTING GALLIUM COMPOUNDS; SURFACE CHARGE;

EPISTRUCTURE DESIGN; GATE LEAKAGE; POWER DENSITY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 41749090482     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.917939     Document Type: Article

References (9)

1. Daumiller, D. Theron, C. Gaquière, A. Vescan, R. Dietrich, A. Wieszt, H. Leier, R. Ventury, U. K. Mishra, I. P. Smorchkova, S. Keller, N. X. Nguyen, C. Nguyen, and E. Kohn, "Current instabilities in GaN-based devices," IEEE Electron Device Lett., vol. 22, no. 2, pp. 62-64, Feb. 2001.
2. R. Vetury, N. Q. Zhang, S. Keller, and U. K. Mishra, "'The impact of surface states on the DC and RE characteristics of AlGaN/GaN HFETs," IEEE Trans. Electron Devices, vol. 48, no. 3, pp. 560-566, Mar. 2001.
3. B. M. Green, K. K. Chu, E. M. Chumbes, J. A. Smart, J. R. Shealy, and L. F. Eastman, "The effect of surface passivation on the microwave characteristics of unudoped AlGaN/GAn hemtS," IEEE Electrons Devices Lett., vol. 21, no. 6, pp. 268-270, Jun. 2000.
4. Y. Ando, Y. Okamoto, H. Miyamoto, T. Nakayama, T. Inoue, and M. Kuzuhara, "10-W/mm AlGaN/GaN HFET with a field modulating plate," IEEE Electron Device Lett., vol. 24, no. 5, pp. 289-291, May 2003.
5. Y. F. Wu, A. Saxler, M. Moore, R. P. Smith, S. Sheppard, P. M. Chavarkar, T. Wisleder, U. K. Mishra, and P. Parikh, "30-W/mm GaN HEMTs by field plate Optimization," IEEE Electron Devices Lett., vol. 25, no 1, pp. 117-119, Mar. 2004.
6. L. Shen, T. Palacios, C. Poblenz, A. Corrion, A. Chakraborty, N. Fichtenbaum, S. Keller, S. P. Denbaars, J. S. Speck, and U. K. Mishra, "Unpassivated high power deeply recessed GaN HEMTs with fluorine-plasma surface treatment," IEEE Electron Device Lett., vol. 27, no. 4, pp. 214-216, Apr. 2006.
7. 6 mixtures," in Proc. IEEE Lester Eastman Conf. High Performance Devices, Aug. 2004, pp. 132-137.
8. L. Shen, Y. Pei, L. McCarthy, C. Poblenz, A. Corrion, N. Fichtenbaum, S. Keller, S. P. Denbaars, J. S. Speck, and U. K. Mishra, "Deep-recessed GaN HEMTs using selective etch technology exhibiting high microwave performance without surface passivation," in Proc. IEEE MIT Int. Microw. Symp., 2007, pp. 623-626.
9. R. M. Chu, L. K. Shen, N. Fichtenbaum, D. Brown, S. Keller, and U. K. Mishra, "Plasma treatment for leakage reduction in AlGaN/GaN and GaN Schottky contacts," IEEE Electron Device Lett., vol. 29, no. 4, pp. 297-299, Apr. 2008.