Electrical and optical properties of tantalum oxide thin films prepared by reactive magnetron sputtering

Journal of Alloys and Compounds

Volumn 509, Issue 41, 2011, Pages 9758-9763

  Wei, A X ^a   Ge, Z X ^a   Zhao, X H ^a   Liu, J ^a   Zhao, Y ^a  

^a GUANGDONG UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Dielectric properties; Magnetron sputtering; Optical characteristics; Oxide materials

Indexed keywords

AMORPHOUS PHASE; ATOM RATIO; ATOMIC RATIO; BREAKDOWN STRENGTHS; DIELECTRIC CONSTANTS; DIELECTRIC SPECTRA; ELECTRICAL AND OPTICAL PROPERTIES; FLOW RATIOS; LOSS TANGENT; MEASUREMENT FREQUENCY; OPTICAL AND DIELECTRIC PROPERTIES; OPTICAL CHARACTERISTICS; OXIDE MATERIALS; OXIDE THIN FILMS; REACTIVE DC MAGNETRON SPUTTERING; REACTIVE MAGNETRON SPUTTERING; SPECTRAL ELLIPSOMETRY; STOICHIOMETRIC RATIO; ULTRAVIOLET-VISIBLE SPECTRA; WAVELENGTH RANGES; XPS ANALYSIS;

AMORPHOUS MATERIALS; ARGON; ATOMIC SPECTROSCOPY; ATOMS; DEPOSITION; DIELECTRIC PROPERTIES; MAGNETRON SPUTTERING; OXIDE FILMS; REFRACTIVE INDEX; TANTALUM; TANTALUM OXIDES; THIN FILMS; VAPOR DEPOSITION; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

FILM PREPARATION;

EID: 80052968373     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2011.08.019     Document Type: Article

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