Effects of substrate temperature on properties of pulsed dc reactively sputtered tantalum oxide films

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 23, Issue 3, 2005, Pages 512-519

  Jain, Pushkar ^a   Juneja, Jasbir S ^a   Bhagwat, Vinay ^a   Rymaszewski, Eugene J ^a   Lu, Toh Ming ^a   Cale, Timothy S ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LEAKAGE CURRENT DENSITY; SUBSTRATE HEATING;

COOLING; CURRENT DENSITY; DIELECTRIC LOSSES; ELECTRIC PROPERTIES; PERMITTIVITY; SPUTTER DEPOSITION; STOICHIOMETRY; TEMPERATURE DISTRIBUTION; THIN FILMS;

TANTALUM COMPOUNDS;

EID: 31044438327     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1897700     Document Type: Article

References (51)

1. R. R. Tummala, Fundamentals of Microsystems Packaging (McGraw-Hill, New York, 2001), Chap., pp. 120-182.
2. R. R. Tummala, E. J. Rymaszewski, and A. G. Klopfenstein, Microelectronics Packaging Handbook, (Chapman and Hall, New York, 1997), Vol. 2, Chap., pp. 1-30.
3. R. C. Frye, J. Electron. Packag. 20 (4), 578 (1997).
4. R. R. Tummala, G. E. White, V. Sundaram, and S. Bhattacharyam, Adv. Microelectron. 27 (1), 13 (2000).
5. J. N. Humenik, J. M. Oberschmidt, L. L. Wu, and S. G. Paull, IBM J. Res. Dev. 36 (5), 935 (1992).
6. R. C. Frye, J. Electron. Packag. 20 (4), 578 (1997).
7. P. Jain, Ph.D. thesis, Rensselaer Polytechnie Institute, Troy, NY, 2003.
8. M. E. Goldfarb and R. A. Pucel, IEEE Microw. Guid. Wave Lett. 1 (6), 84 (1991).
9. J. H. Wu and J. A. del Alamo, MARCO Review, March 22, 2002.
10. H. B. Bakoglu, Circuits, Interconnections, and Packaging for VLSI, VLSI Systems Series (Addision-Wesley, Reading, MA, 1990), Chap., pp. 281-335.
11. B. K. Gilbert and G.-W. Pan, IEEE Trans. Microwave Theory Tech. 45, 1819 (1997).
12. K. Y. Chen, W. D. Brown, L. W. Schaper, S. S. Ang, and H. A. Naseem, Anat. Embryol. 23, 293 (2000).
13. R. Dowining, P. Gebler, and G. Katopis, IEEE Trans. Compon., Hybrids, Manuf. Technol. 16, 484 (1993).
14. M. P. Goetz, IEEE Trans. Compon., Packag. Manuf. Technol., Part B 19, 518 (1996).
15. P. Jain, J. Y. Kim, Y. Xiao, R. Natarajan, E. J. Rymaszewski, R. J. Gutmann, and T. P. Chow, in Proc. of CPES Annual Review, Blacksburg, VA, 2000, pp. 155-158.
16. P. Chahal, R. R. Tummala, G. Allen, and M. Swaminathan, IEEE Trans. Compon., Packag. Manuf. Technol., Part B 21, 184 (1998).
17. P. Jain and E. J. Rymaszewski, IEEE Trans. Adv. Packag. 25, 454 (2002).
18. International Technology Roadmap for Semiconductors, Assembly and Packaging, (Semiconductor Industry Association, San Jose, 2001), http://public.itrs.net/files/1999_SIA_Roadmap/Assembly.pdf
19. J. D. Van Wyk and F. C. Lee, in Proc. of the 1999 Annual Power Electronics Seminar, Virginia, 19-26 Sept., 1999, pp. 62-70.
20. J.-Y. Kim, A. Garg, E. J. Rymaszewski, and T.-M. Lu, IEEE Trans. Compon., Packag. Manuf. Technol., Part A 24 (3), 526 (2001).
21. C. Chaneliere, S. Four, J. L. Autran, R. A. B. Divine, and B. Balland, Mater. Sci. Eng., R. 22 (6), 269 (1998).
22. J.-Y. Kim, M. Nielsen, E. J. Rymaszewski, and T.-M. Lu, J. Appl. Phys. 87 (3), 1448 (2000).
23. J.-Y. Kim, Ph.D. thesis, Rensselaer Polytechnic Insttitute, Troy, NY, 2000.
24. M. C. Nielsen, Ph.D. thesis, Rensselaer Polytechnic Institute, Troy, NY, 1998.
25. G. Morcan, S. S. Ang, T. Lenihan, L. W. Schaper, and W. D. Brown, IEEE Trans. Adv. Packag. 22 (3), 499 (1997).
26. K. Chen, M. Nielsen, S. Soss, E. J. Rymaszewski, T.-M. Lu, and C. Wan, IEEE Trans. Compon., Packag. Manuf. Technol., Part B 20, 117 (1997).
27. S.-D. Cho and K.-W. Paik, Mater. Sci. Eng., B 67, 108 (1999).
28. X. M. Wu, P. K. Wu, T.-M. Lu, and E. J. Rymaszewski, Appl. Phys. Lett. 62 (25), 3364 (1993).
29. P. Wilcox, J. Vac. Sci. Technol. 9, 74 (1971).
30. S. G. Byeon and Y. Tzeng, IEEE Trans. Electron Devices 37, 972 (1990).
31. G. S. Oehrlein, J. Appl. Phys. 59, 1587 (1986).
32. K.-A. Son, A. Y. Mao, Y-M. Sun, B. Y. Kim, F. Liu, A. Kamath, J. M. White, D. A. Roberts, and R. N. Vrtis, Appl. Phys. Lett. 72, 1187 (1998).
33. J. V. Grahn, P. E. Hellberg, and E. Olsson, J. Appl. Phys. 84, 1632 (1998).
34. F.-C. Chiu, J.-J. Wang, J. Y.-M. Lee, and S. C. Wu, J. Appl. Phys. 81, 6911 (1997).
35. S. Roberts, J. Ryan, and L. Nesbit, J. Electrochem. Soc. 133, 1405 (1986).
36. E. Atanassova, T. Dimitrova, and J. Koprinarova, Appl. Surf. Sci. 84, 193 (1995).
37. P.-H. Chang and H.-Y. Liu, Thin Solid Films 258, 56 (1995).
38. H. Fujikawa, K. Yamashita, and Y. Taga, Mater. Chem. Phys. 35, 11 (1993).
39. P. Jain, V. Bhagwat, E. J. Rymaszewski, T. M. Lu, S. Berg, and T. S. Cale, J. Appl. Phys. 93 (6), 3596 (2003).
40. M. C. Nielsen, J.-Y Kim, E. J. Rymaszewski, T-M Lu, A. Kumar, and H. Bakhru, IEEE Trans. Compon., Packag. Manuf. Technol., Part B 21 (3), 274 (1998).
41. W. D. Sproul, M. E. Graham, M. S. Wong, S. Lopez, D. Li, and R. A. Scholl, J. Vac. Sci. Technol. A 13, 1188 (1995).
42. H. Tomaszewski, J. Haemers, J. Denul, N. D. Roo, and R. D. Gryse, Thin Solid Films 287, 104 (1996).
43. L. Combadiere and J. Machet, Surf. Coat. Technol. 88 (1-3), 17 (1996).
44. W. R. Hardy and D. Mills, J. Vac. Sci. Technol. 10 (1), 303 (1973).
45. R. M. Valletta, W. A. Pliskin, J. Electrochem. Soc. 114, 944 (1967).
46. J. F. Moulder, W. F. Stickle, P. E. Sobol, and K. D. Bomben, in Handbook of X-Ray Photoelectron Spectroscopy, edited by, J. Chastain, (Perkin Elmer Corp., Eden Prairie, Minnesota, 1992).
47. H. S. Fogler, Elements of Chemical Reaction Engineering (Prentice Hall, Englewood Cliffs, NJ, 1986), Chap.
48. G. B. Raupp, T. S. Cale, and H. P. W. Hey, J. Vac. Sci. Technol. B 10 (1), 37 (1992).
49. T. S. Cale, G. B. Raupp, and T. H. Gangy, J. Vac. Sci. Technol. A 10 (4), 1128 (1992).
50. L. Vattuone, M. Rocca, C. Boragno, and U. Valbusa, J. Chem. Phys. 101 (1), 726 (1994).
51. L. Vattuone, M. Rocca, C. Boragno, and U. Valbusa, J. Chem. Phys. 101 (1), 713 (1994).