Structure and optical analysis of Ta 2 O 5 deposited on infrasil substrate

Applied Surface Science

Volumn 255, Issue 9, 2009, Pages 4829-4835

  Azim, Osama A ^a   Abdel Aziz, M M ^b   Yahia, I S ^b,c  

^a Arab International Optronics Co   (Egypt)

^b Ain Shams University   (Egypt)

^c INSTITUTE OF PHYSICS   (Poland)

Author keywords

Dielectric constant; Ditantalum pentoxide (Ta 2 O 5 ); Optical dispersion parameters; The electric free carrier susceptibility

Indexed keywords

CARRIER CONCENTRATION; DISPERSIONS; ENERGY GAP; HIGH-K DIELECTRIC; LIGHT ABSORPTION; PERMITTIVITY; REFRACTIVE INDEX; SUBSTRATES; TANTALUM OXIDES; X RAY DIFFRACTION;

DITANTALUM PENTOXIDE (TA2O5); FREE CARRIERS; GRAPHICAL REPRESENTATIONS; HIGH-FREQUENCY DIELECTRICS; OPTICAL DISPERSION PARAMETERS; REFRACTIVE INDEX DISPERSION; STRUCTURE CHARACTERIZATION; TRANSMITTANCE MEASUREMENTS;

DISPERSION (WAVES);

EID: 60549113299     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.11.084     Document Type: Article

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