Catalytic CVD growth of Si-C and Si-C-O alloy films by using alkylsilane and related compounds

Thin Solid Films

Volumn 430, Issue 1-2, 2003, Pages 87-90

  Nakayama, H ^a   Takatsuji, K ^a   Murakami, K ^a   Miura, Y ^a   Shimoyama, N ^b   Machida, H ^b  

^a Osaka Prefecture University   (Japan)

^b TRI Chemical Laboratory Inc   (Japan)

Author keywords

Cat CVD; Si C; Si C O; TEOS

Indexed keywords

CATALYSIS; CHEMICAL VAPOR DEPOSITION; DECOMPOSITION; FILM GROWTH; INSULATING MATERIALS; LOW TEMPERATURE EFFECTS; PHOTOLUMINESCENCE; SILICON ALLOYS; SILICON CARBIDE; TANTALUM; TUNGSTEN;

CATALYTIC CHEMICAL VAPOR DEPOSITION (CAT-CVD);

THIN FILMS;

EID: 0038485897     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(03)00078-6     Document Type: Conference Paper

References (5)

1. Nakayama H., Ohta H., Kulatov E. Physica B. 302-303:2001;419.
2. Nakayama H., Ohta H., Kulatov E. Thin Solid Films. 395:2001;234.
3. H. Nakayama, J. Weber, unpublished.
4. Itoh T., Katoh Y., Fujiwara T., Fukunaga K., Nonomura S., Nitta S. Thin Solid Films. 395:2001;240.
5. Chemical Society of Japan (Ed.), Kagakubinran, 3rd ed. (in Japanese), Maruzen, 1984, p. 324.