SiC thin film preparation by ArF excimer laser chemical vapor deposition Part 1 : Rate of photolysis of alkylsilanes by ArF excimer laser and their decomposition products

Thin Solid Films

Volumn 274, Issue 1-2, 1996, Pages 70-75

  Watanabe, Akio ^a   Osato, Kazuo ^a   Ninomiya, Shinji ^a   Mukaida, Masakazu ^a   Tsunoda, Tatsuo ^a   Imai, Yoji ^a  

^a NATL INST OF MAT AND CHEM RES   (Japan)

Author keywords

Alkylsilanes; IR absorption spectra; Laser irradiation; Photolysis; SiC films

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DECOMPOSITION; EXCIMER LASERS; FILM PREPARATION; INFRARED SPECTROSCOPY; LASER BEAM EFFECTS; LIGHT ABSORPTION; METHANE; PHOTOCHEMICAL REACTIONS; REACTION KINETICS; SILANES; SILICON CARBIDE;

ALKYLSILANES; ARGON FLUORIDE EXCIMER LASER; DECOMPOSITION PRODUCTS; HEXAMETHYLDISILANE; SILICON CARBIDE THIN FILMS; TETRAMETHYLSILANE; TRIMETHYLSILANE;

THIN FILMS;

EID: 0030101082     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(95)08186-0     Document Type: Article

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