Ballistic electron emission from quantum-sized nanosilicon diode and its applications

Current Opinion in Solid State and Materials Science

Volumn 15, Issue 5, 2011, Pages 183-187

  Koshida, Nobuyoshi ^a   Ohta, Toshiyuki ^a   Gelloz, Bernard ^a   Kojima, Akira ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

Ballistic emission; Electron attachment; H2 gas; Image pickup; Lithography; Nanosilicon; PH control; Thin film deposition; Tunnel; VUV emission

Indexed keywords

BALLISTICS; DEPOSITION; ELECTRON BEAM LITHOGRAPHY; ELECTRONS; HYDROGEN PRODUCTION; LITHOGRAPHY; MOLECULES; NANOCRYSTALLINE SILICON; NANOCRYSTALS; NEGATIVE IONS; PICKUPS; TUNNELS;

ELECTRON ATTACHMENT; NANO-SILICON; PH CONTROL; THIN-FILM DEPOSITIONS; VUV EMISSION;

ELECTRON EMISSION;

EID: 80052598434     PISSN: 13590286     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cossms.2011.04.003     Document Type: Article

References (44)

1. Koshida N, editor. Device applications of silicon nanocrystals and nanostructures. New York: Springer; 2009. p. 344.
2. Koshida N, Ozaki T, Sheng X, Koyama H. Jpn J Appl Phys 1995;34:L705.
3. Komoda T, Sheng X, Koshida N. J Vac Sci Technol B 1999;17:1076.
4. Koshida N, Sheng X, Komoda T. Appl Surf Sci 1999;146:371.
5. Kojima A, Ohyi H, Koshida N. J Vac Sci Technol B 2008;26:2064.
6. Nakada T, Sato T, Matsuba Y, Tanaka R, Sakemura K, Negishi N, et al. J Vac Sci Technol B 2009;27:735.
7. Komoda T, Ichihara T, Honda Y, Hatai T, Baba T, Takegawa Y, et al. J Soc Inform Disp 2004;12:29.
8. Ohta T, Kojima A, Hirakawa H, Iwamatsu T, Koshida N. J Vac Sci Technol B 2005;23:2336.
9. Ichihara T, Hatai T, Koshida N. J Vac Sci Technol B 2009;28:772.
10. Koshida N, Ohta T, Gelloz B. Appl Phys Lett 2007;90:163505.
11. Ohta T, Gelloz B, Koshida N. J Vac Sci Technol B 2008;26:716.
12. Ohta T, Gelloz B, Koshida N. Electrochem Solid State Lett 2010;13:D73.
13. Hirano Y, Okamoto K, Yamazaki S, Koshida N. Appl Phys Lett 2009;95:063109.
14. Ohta T, Kojima A, Koshida N. J Vac Sci Technol B 2007;25:524.
15. Sakai D, Oshima C, Ohta T, Koshida N. J Vac Sci Technol B 2008;26:1782.
16. Kojima A, Koshida N. Appl Phys Lett 2005;86:022102.
17. Handy RM. J Appl Phys 1966;37:4620.
18. Hrach R. Thin Solid Films 1973;15:65.
19. Kusunoki T, Suzuki M, Sasaki S, Yaguchi T, Aida T. Jpn J Appl Phys 1993;32:L1695.
20. Suzuki M, Kusunoki T, Shinada H, Yaguchi T. J Vac Sci Technol B 1995;13(6):2201.
21. Spindt CA, Brodie I, Humphrey L, Westerberg ER. J Appl Phys 1976;47:5248.
22. Pshenichnyuk SA, Yumaguzin YM. Diam Relat Mater 2004;13:125.
23. Ueda A, Nishibayashi Y, Imai I. Diam Relat Mater 2009;18:854.
24. Schlesser R, McClure MT, Choi WB, Hren JJ, Sitar Z. Appl Phys Lett 1997;70:1596.
25. Kinoshita H, Murakami T. J Vac Sci Technol A 2002;20:403.
26. Deheer WA, Bacsa WS, Chatelain A, Gerfin T, Humphreybaker R, Forro L, et al. Science 1995;268:845.
27. Rinzler AG, Hafner JH, Nikolaev P, Lou L, Kim SG, Tomanek D, et al. Science 1995;269:1550.
28. Deheer WA, Chatelain A, Ugarte D. Science 1995;270:1179.
29. Saito Y, Hamaguchi K, Mizushima R, Uemura S, Nagasako T, Yotani J, et al. Appl Surf Sci 1999;146:305.
30. Yu SG, Yi WK, Lee J, Jeong T, Jin SH, Heo J, et al. Appl Phys Lett 2002;80:4036.
31. Yotani J, Uemura S, Nagasako T, Kurachi H, Nakao T, Ito M, et al. J Soc Inform Disp 2009;17:361.
32. Sakai K, Nomura I, Yamaguchi E, Yamanobe M, Ikeda S, Hara T, et al. Euro Disp 1996;18:569 (Birmingham, UK).
33. Yamaguchi E, Sakai K, Nomura I, Ono T, Yamanobe M, Abe N, et al. SID Int Symp Digest Techn Pap 1997;5:345 (Boston, USA).
34. Yamamoto K, Oguchi T, Sasaki K, Nomura I, Uzawa S, Hatanaka K. J Soc Inform Disp 2006;14:73.
35. Yokoo K, Tanaka H, Sato S, Murota J, Ono S. J Vac Sci Technol B 1993;11:429.
36. Yokoo K, Sato S, Koshita G, Amano I, Murota J, Ono S. J Vac Sci Technol B 1994;12:801.
37. Uno S, Mori N, Nakazato K, Koshida N, Mizuta H. Phys Rev B 2005;72:035337.
38. Uno S, Nakazato K, Yamaguchi S, Kojima A, Koshida N, Mizuta H. IEEE Trans Nanotechnol 2004;3:301.
39. Mori N, Minari H, Uno S, Mizuta H, Koshida N. J Phys Conf Ser 2009;193:012008.
40. Ludeke R, Bauer A, Cartier E. J Vac Sci Technol B 1995;13:1830.
41. Cartier E. Microelectron Reliab 1998;38:201.
42. Wen HJ, Ludeke R, Newns DM, Lo SH, Cartier E. Appl Surf Sci 1998;123(/ 124):418.
43. Laux SE, Kumar A, Fischetti MV. J Appl Phys 2004;95:5545.
44. Kojima A, Ohta T, Koshida N, Ohyi H. Proc SPIE Adv Lithography 2010;7637:763712.