Avalanche multiplication of photocarriers in nanometer-sized silicon dot layers

Applied Physics Letters

Volumn 95, Issue 6, 2009, Pages

  Hirano, Yoshiyuki ^a   Okamoto, Kenta ^b   Yamazaki, Susumu ^b   Koshida, Nobuyoshi ^b  

^a NHK SCIENCE AND TECHNICAL RESEARCH LABORATORIES   (Japan)

^b TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE MULTIPLICATION; DRY PROCESSING; HIGH QUANTUM EFFICIENCY; HIGHLY SENSITIVE; LOW VOLTAGE OPERATION; LOW-PRESSURE CHEMICAL VAPOR DEPOSITION; MEAN DIAMETER; NANOCRYSTALLINE SI; NANODOTS; PHOTO-CARRIERS; PHOTOEXCITED CARRIERS; REVERSE BIAS; SI WAFER; TEMPERATURE DEPENDENCE; THERMAL OXIDATION;

ELECTRIC FIELDS; ELECTRIC POTENTIAL; NANOSTRUCTURED MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES; SEMICONDUCTOR QUANTUM DOTS; SILICON OXIDES; SILICON WAFERS;

QUANTUM EFFICIENCY;

EID: 69049103166     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3205119     Document Type: Article

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