Specific spectral features in electron emission from nanocrystalline silicon quasi-ballistic cold cathode detected by an angle-resolved high resolution analyzer

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 5, 2008, Pages 1782-1786

  Sakai, Daisuke ^a   Oshima, Chunhei ^a   Ohta, Toshiyuki ^b   Koshida, Nobuyoshi ^b  

^a WASEDA UNIVERSITY   (Japan)

^b TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIODES; EMISSION SPECTROSCOPY; NANOCRYSTALLINE ALLOYS; NANOCRYSTALLINE MATERIALS; NANOSTRUCTURED MATERIALS; POLYSILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON;

ACCEPTANCE ANGLES; ANGULAR DISPERSIONS; COLD CATHODES; EMISSION BANDS; EMISSION PATTERNS; EMISSION PEAKING; EN ERGY SPECTRUM; ENERGETIC ELECTRONS; ENERGY DISTRIBUTIONS; EXPERIMENTAL DATA; HIGH RESOLUTIONS; HIGH-ENERGY RESOLUTION; LOWER ENERGIES; NANO-CRYSTALLINE; OPERATION MECHANISM; QUASI-BALLISTIC; SILICON DIODES; SILICON NANO STRUCTURES; SPECTRAL FEATURES; TYPE ANALYZER;

NANOCRYSTALLINE SILICON;

EID: 53349122303     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2975203     Document Type: Article

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