Enhanced output current density of an active-matrix high-efficiency electron emission device array with 13.75 μm pixels

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 2, 2009, Pages 735-739

  Nakada, Tomonari ^a   Sato, Takanobu ^a   Matsuba, Yohei ^a   Tanaka, Ryota ^a   Sakemura, Kazuto ^a   Negishi, Nobuyasu ^a   Okuda, Yoshiyuki ^a   Watanabe, Atsushi ^a   Yoshikawa, Takamasa ^a   Ogasawara, Kiyohide ^a   Nanba, Masakazu ^b   Tanioka, Kenkichi ^b   Egami, Norifumi ^b   Koshida, Nobuyoshi ^c  

^a PIONEER CORPORATION   (Japan)

^b NHK SCIENCE AND TECHNICAL RESEARCH LABORATORIES   (Japan)

^c TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE MATRIXES; DEVICE ARRAYS; DEVICE ISOLATIONS; EMISSION CURRENT DENSITIES; EMITTING AREAS; HIGH DEFINITIONS; HIGH EFFICIENCIES; HIGH-GAIN AVALANCHE RUSHING AMORPHOUS PHOTOCONDUCTORS; IMAGING PROBES; PICK-UP; ULTRA HIGH SENSITIVITIES;

DIGITAL IMAGE STORAGE; ELECTRON EMISSION; HIGH ENERGY ELECTRON DIFFRACTION; IMAGE SENSORS;

PIXELS;

EID: 64549087668     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3079653     Document Type: Article

References (13)

1. N. Negishi, T. Chuman, S. Iwasaki, T. Yoshikawa, H. Ito, and K. Ogasawara, Jpn. J. Appl. Phys., Part 2 36, L939 (1997).
2. K. Sakemura, N. Negsihi, T. Yamada, H. Satoh, A. Watanabe, T. Yoshikawa, K. Ogasawara, and N. Koshida, J. Vac. Sci. Technol. B 22, 1367 (2004).
3. N. Negsihi, J. Vac. Sci. Technol. B 23, 1021 (2005).
4. N. Negsihi, J. Vac. Sci. Technol. B 24, 1021 (2006).
5. M. Nanba, J. Inst. Image Inf. Telev. Eng. 61, 387 (2007) (Japanese).
6. N. Negishi, J. Vac. Sci. Technol. B 25, 661 (2007).
7. N. Negishi, J. Vac. Sci. Technol. B 26, 711 (2008).
8. K. Tanioka, J. Yamazaki, K. Shidara, K. Kawamura, S. Ishioka, and Y. Takasaki, IEEE Electron Device Lett. 8, 392 (1987).
9. C. A. Spindt, I. Brodie, L. Humphrey, and E. R. Westerberg, J. Appl. Phys. 47, 5248 (1976).
10. Y. Takiguchi, IEICE Trans. Electron. E85C11, 1916 (2002).
11. T. Komoda, X. Sheng, and N. Koshida, J. Vac. Sci. Technol. B 17, 1076 (1999).
12. N. Koshida, T. Ozaki, X. Sheng, and H. Koyama, Jpn. J. Appl. Phys., Part 2 34, L705 (1995).
13. N. Egami, J. Vac. Sci. Technol. B 23, 2056 (2005).