Surface electron emission lithography system based on a planar type Si nanowire array ballistic electron source

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7637, Issue , 2010, Pages

  Kojima, A ^a,b   Ohta, T ^b   Ohyi, H ^a   Koshida, N ^b  

^a Crestec Corp   (Japan)

^b TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

Ballistic electron transport; Minibandgap; Parallel EB lithography; Quantum confinement effect; Silicon nanowire; Silicon quantum dot

Indexed keywords

BALLISTIC ELECTRON TRANSPORT; EB LITHOGRAPHY; QUANTUM CONFINEMENT EFFECT; QUANTUM CONFINEMENT EFFECTS; QUANTUM DOT; SILICON NANOWIRES;

BALLISTICS; ELECTRIC WIRE; ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; MAGNETIC FIELDS; NANOCRYSTALLITES; NANOWIRES; QUANTUM CHEMISTRY; QUANTUM CONFINEMENT; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SILICON WAFERS;

ELECTRON EMISSION;

EID: 77953304873     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.846343     Document Type: Conference Paper

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