Quasi-ballistic electron transport through silicon nanocrystals

Journal of Physics: Conference Series

Volumn 193, Issue , 2009, Pages

  Mori, Nobuya ^a   Minari, Hideki ^a   Uno, Shigeyasu ^b   Mizuta, Hiroshi ^c   Koshida, Nobuyuki ^d  

^a OSAKA UNIVERSITY   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

^c UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

^d TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 74049132218     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/193/1/012008     Document Type: Conference Paper

References (6)

1. Komoda T and Koshida N 2009 Device Applications of Silicon Nanocrystals and Nanostructures, Koshida N (New York, Springer-Verlag) p 251-291
2. Koshida N, Ozaki T, Cheng X and Koyama K 1995 Japan. J. Appl. Phys. 34 L705
3. Uno S, Nakazato K, Yamaguchi S, Kojima A, Koshida N and Mizuta H 2003 IEEE Trans. Nanotechonol. 2 301
4. Jancu J M, Scholz R, Beltram F and Bassani F 1998 Phys. Rev. B 57 6493
5. Mizuta H, Uno S, Mori N, Oda S and Koshida N 2009 Device Applications of Silicon Nanocrystals and Nanostructures, Koshida N (New York, Springer-Verlag) p 197-221
6. Bockelmann U and Bastard G 1990 Phys. Rev. B 42 8947