Direct evidence for shallow acceptor states with nonspherical symmetry in GaAs

Physical Review Letters

Volumn 94, Issue 2, 2005, Pages

  Mahieu, G ^a   Grandidier, B ^a   Deresmes, D ^a   Nys, J P ^a   Stievenard D ^a   Ebert, Ph ^b  

^a INSTITUT D ELECTRONIQUE   (France)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DANGLING BONDS; DENSITY OF STATE (DOS); DOPING DENSITY; TUNNELING SPECTRA;

CHARGE CARRIERS; DOPING (ADDITIVES); ELECTRON TUNNELING; ELECTRONIC PROPERTIES; FERMI LEVEL; IMPURITIES; POISSON EQUATION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR DEVICES; ULTRAHIGH VACUUM;

SEMICONDUCTING GALLIUM;

EID: 18244395084     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.94.026407     Document Type: Article

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