Atom-by-atom substitution of Mn in GaAs and visualization of their hole-mediated interactions

Nature

Volumn 442, Issue 7101, 2006, Pages 436-439

  Kitchen, Dale ^a,b   Richardella, Anthony ^a,b   Tang, Jian Ming ^c   Flatté, Michael E ^c   Yazdani, Ali ^a  

^a PRINCETON UNIVERSITY   (United States)

^b University of Illinois at Urbana Champaign   (United States)

^c UNIVERSITY OF IOWA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; DOPING (ADDITIVES); ELECTRONIC STRUCTURE; FERROMAGNETIC MATERIALS; FERROMAGNETISM; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR MATERIALS;

FERROMAGNETIC TRANSITION TEMPERATURE; HOLE-MEDIATED INTERACTIONS; MAGNETIC DOPANTS; PROOF-OF-CONCEPT SPINTRONIC DEVICES;

SEMICONDUCTING GALLIUM ARSENIDE;

GALLIUM ARSENIDE; MANGANESE; ZINC;

ELECTRON; GALLIUM; MANGANESE; SCANNING TUNNELLING MICROSCOPY; SUBSTITUTION; TECHNOLOGICAL DEVELOPMENT; VISUALIZATION;

ANISOTROPY; ARTICLE; ATOM; ATOM BY ATOM SUBSTITUTION; CALCULATION; CRYSTALLOGRAPHY; DILUTION; ELECTRON; FERROMAGNETISM; IMAGE ANALYSIS; IMAGING SYSTEM; MAGNETISM; MOLECULAR INTERACTION; PRIORITY JOURNAL; ROOM TEMPERATURE; ROTATION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR; TRANSITION TEMPERATURE;

EID: 33747586347     PISSN: 00280836     EISSN: 14764687     Source Type: Journal    
DOI: 10.1038/nature04971     Document Type: Article

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