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Volumn 96, Issue 6, 2006, Pages
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Probing semiconductor gap states with resonant tunneling
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Author keywords
[No Author keywords available]
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Indexed keywords
ANISOTROPY;
ELECTRIC CONDUCTIVITY;
ELECTRIC POTENTIAL;
ENERGY GAP;
LOW TEMPERATURE EFFECTS;
RESONANT TUNNELING;
SCANNING TUNNELING MICROSCOPY;
ZINC COMPOUNDS;
DEPLETION LAYER;
TUNNELING PROBABILITY;
TUNNELING TRANSPORT;
SEMICONDUCTING GALLIUM ARSENIDE;
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EID: 33144486735
PISSN: 00319007
EISSN: 10797114
Source Type: Journal
DOI: 10.1103/PhysRevLett.96.066403 Document Type: Article |
Times cited : (34)
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References (16)
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