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Volumn 64, Issue 7, 2001, Pages

STM observations of GaAs(110) showing the top and bottom zig-zag rows of the surface

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ARSENIDE;

EID: 0035881394     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.64.075314     Document Type: Article
Times cited : (13)

References (35)
  • 10
    • 85038274839 scopus 로고    scopus 로고
    • C. J. Chen, (Oxford University Press, Oxford, 1993). Chapter 3 explains that for an, -like tip state the tunneling matrix element is proportional to the surface DOS of the sample evaluated at the center of the tip apex atom. The usual interpretation of STM results is well summarized by Eqs. (2.36) and (3.26)
    • C. J. Chen, Introduction to Scanning Tunneling Microscopy (Oxford University Press, Oxford, 1993). Chapter 3 explains that for an s-like tip state the tunneling matrix element is proportional to the surface DOS of the sample evaluated at the center of the tip apex atom. The usual interpretation of STM results is well summarized by Eqs. (2.36) and (3.26).
  • 12
    • 85038346474 scopus 로고    scopus 로고
    • Germany: The thesis shows that for small tip-sample distance the band gap evident in (formula presented) spectra taken at normal tip-sample distances disappears
    • See also Ph. D. thesis, A. J. Heinrich, Cuvillier Verlag, Göttingen, Germany, 1998. The thesis shows that for small tip-sample distance the band gap evident in (formula presented) spectra taken at normal tip-sample distances disappears.
    • (1998) Cuvillier Verlag, Göttingen
    • See also, P.1    thesis, D.2    Heinrich, A.J.3
  • 14
    • 85038267945 scopus 로고    scopus 로고
    • (unpublished)
    • A. Depuydt(unpublished).
    • Depuydt, A.1
  • 15
    • 85038325193 scopus 로고    scopus 로고
    • S. Ciraci, in, edited by R. Wiesendanger and H.-J. Günteroth (Springer-Verlag, Berlin, 1996), 182–197
    • S. Ciraci, in Scanning Tunneling Microscopy III, edited by R. Wiesendanger and H.-J. Günteroth (Springer-Verlag, Berlin, 1996), pp. 182–197.
  • 19
    • 0001645262 scopus 로고    scopus 로고
    • In the work presented in Refs., and, the tip is represented by a four-atom Si tetrahedron. On the back side of the tetrahedron, the dangling bonds have been saturated with hydrogen atoms
    • S H. Ke, T. Uda, R. Perez, I. Stich, and K. Terakura, Phys. Rev. B60, 11 639 (1999). In the work presented in Refs. 17, 22 and 23, the tip is represented by a four-atom Si tetrahedron. On the back side of the tetrahedron, the dangling bonds have been saturated with hydrogen atoms.
    • (1999) Phys. Rev. B , vol.60 , pp. 11 639
    • Ke, S.H.1    Uda, T.2    Perez, R.3    Stich, I.4    Terakura, K.5
  • 20
    • 85038289525 scopus 로고    scopus 로고
    • We use commercially available, -doped GaAs wafers with a nominal doping concentration of (formula presented) The actual doping concentration may lie between 1 and (formula presented)
    • We use commercially available n-doped GaAs wafers with a nominal doping concentration of (formula presented) The actual doping concentration may lie between 1 and (formula presented)


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