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Germany: The thesis shows that for small tip-sample distance the band gap evident in (formula presented) spectra taken at normal tip-sample distances disappears
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In the work presented in Refs., and, the tip is represented by a four-atom Si tetrahedron. On the back side of the tetrahedron, the dangling bonds have been saturated with hydrogen atoms
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We use commercially available, -doped GaAs wafers with a nominal doping concentration of (formula presented) The actual doping concentration may lie between 1 and (formula presented)
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We use commercially available n-doped GaAs wafers with a nominal doping concentration of (formula presented) The actual doping concentration may lie between 1 and (formula presented)
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