Tunable field control over the binding energy of single dopants by a charged vacancy in GaAs

Science

Volumn 330, Issue 6012, 2010, Pages 1807-1810

  Lee, D H ^a   Gupta, J A ^a  

^a OHIO STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; GALLIUM ARSENIDE; MANGANESE;

CHEMICAL BINDING; COULOMB CRITERION; ELECTRIC FIELD; EXPERIMENTAL STUDY; FERROMANGANESE DEPOSIT; QUANTUM MECHANICS; SCANNING TUNNELLING MICROSCOPY;

ACCELERATION; ACCURACY; ARTICLE; ELECTRIC FIELD; ENERGY TRANSFER; INFORMATION PROCESSING; MAGNETISM; PRIORITY JOURNAL; QUANTUM MECHANICS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR; STATIC ELECTRICITY;

EID: 78650679453     PISSN: 00368075     EISSN: 10959203     Source Type: Journal    
DOI: 10.1126/science.1197434     Document Type: Article

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