Improved electrical and optical properties of vertical GaN LEDs using fluorine-doped ITO/Al ohmic reflectors

IEEE Journal of Quantum Electronics

Volumn 47, Issue 10, 2011, Pages 1277-1282

  Lee, Wan Ho ^a   Chae, Dong Ju ^a   Kim, Dong Yoon ^a   Kim, Tae Geun ^a  

^a Korea University   (South Korea)

Author keywords

Light emitting diodes; plasma treatment; reflectance; resistivity; Schottky barrier height; transmittance

Indexed keywords

CONTACT RESISTIVITIES; ELECTRICAL AND OPTICAL PROPERTIES; FILM SURFACES; FLUORINE DOPING; FLUORINE-DOPED; GAN LEDS; GAN LIGHT-EMITTING DIODES; ITO FILMS; LIGHT OUTPUT POWER; OHMIC REFLECTORS; PLASMA TREATMENT; RAPID THERMAL PROCESS; ROOT MEAN SQUARE; SCHOTTKY BARRIER HEIGHTS; TRANSMITTANCE;

ALUMINUM; ELECTRIC PROPERTIES; FLUORINE; GALLIUM NITRIDE; INDIUM; LIGHT EMISSION; OPTICAL PROPERTIES; PLASMA DEPOSITION; RAPID THERMAL PROCESSING; REFLECTION; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DOPING; SEMICONDUCTOR METAL BOUNDARIES; SURFACE PROPERTIES; SURFACE ROUGHNESS; TIN; TIN OXIDES;

LIGHT EMITTING DIODES;

EID: 80052396212     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2011.2161271     Document Type: Article

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