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Electrochemical and Solid-State Letters

Volumn 13, Issue 4, 2010, Pages

Low resistance high reflectance ITO/Al ohmic contacts to p-Type GaN via SF6 plasma treatments

(7) Lee, Wan Ho a Kim, Dong Ho a Chae, Dong Ju a Yang, Ji Won a Sim, Jae In a Sung, Yun Mo b Kim, Tae Geun a

a School of Electrical Engineering (South Korea)

b Korea University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONTACTORS; GALLIUM NITRIDE; LIGHT EMITTING DIODES; OHMIC CONTACTS; OPTICAL PROPERTIES; SULFUR HEXAFLUORIDE; TIN OXIDES;

ELECTRICAL AND OPTICAL PROPERTIES; GAN LIGHT-EMITTING DIODES; INDIUM TIN OXIDE; LOW RESISTANCE; P-TYPE GAN; PLASMA TREATMENT; SPECIFIC CONTACT RESISTANCES; VERTICAL-TYPE;

REFLECTION;

EID: 76749156268 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3290733 Document Type: Article

Times cited : (9)

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