Effects of oxygen gas annealing on electrical properties and internal stress in indium tin oxide films

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 41, Issue 6 A, 2002, Pages

  Takayama, Shinji ^a   Tanaka, Akira ^a   Sugawara, Toshifumi ^a   Himuro, Tokuji ^a  

^a HOSEI UNIVERSITY   (Japan)

Author keywords

Internal stress; ITO films; Oxygen annealing; Resistivity

Indexed keywords

ANNEALING; CRYSTAL ORIENTATION; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRON MOBILITY; HALL EFFECT; INDIUM COMPOUNDS; MAGNETRON SPUTTERING; MORPHOLOGY; POLYCRYSTALLINE MATERIALS; RESIDUAL STRESSES; SUBSTRATES; SURFACES;

D.C. MAGNETRON SPUTTERING; INDIUM TIN OXIDE FILM; OXYGEN GAS ANNEALING; POST-OXYGEN ANNEALING; VAN DER PAUW METHOD;

CONDUCTIVE FILMS;

EID: 0036612774     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.l619     Document Type: Letter

References (5)