A study of low temperature crystallization of amorphous thin film indium-tin-oxide

Journal of Applied Physics

Volumn 85, Issue 12, 1999, Pages 8445-8450

  Paine, David C ^a   Whitson, T ^a   Janiac, D ^a   Beresford, R ^a   Yang, Cleva Ow ^a   Lewis, Brian ^b  

^a BROWN UNIVERSITY   (United States)

^b Arconium   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRODEPOSITION; FILM GROWTH; LOW TEMPERATURE EFFECTS; RELAXATION PROCESSES; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; VOLUME FRACTION; X RAY CRYSTALLOGRAPHY;

BIXBYITE CRYSTAL STRUCTURES; KINETIC GROWTH PARAMETERS; THREE-DIMENSIONAL TRANSFORMATION GEOMETRY;

AMORPHOUS FILMS;

EID: 0032614640     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370695     Document Type: Article

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