Low-resistance Al-based reflectors for high-power GaN-based flip-chip light-emitting diodes

Applied Physics Letters

Volumn 86, Issue 13, 2005, Pages 1-3

  Song, June O ^a   Hong, Woong Ki ^a   Park, Y ^b   Kwak, J S ^c   Seong, Tae Yeon ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^c Sunchon National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ANNEALING; DEPOSITION; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; ELECTRODES; FLIP CHIP DEVICES; GALLIUM NITRIDE; INDIUM COMPOUNDS; OXIDATION; SILVER; VACUUM;

CONTACT RESISTANCE; INDIUM TIN OXIDES (ITO); INJECTION CURRENT; OHMIC REFLECTORS;

LIGHT EMITTING DIODES;

EID: 17644406361     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1894614     Document Type: Article

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