A SiGe Quadrature transmitter and receiver chipset for emerging high-frequency applications at 160GHz

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn 53, Issue , 2010, Pages 416-417

  Pfeiffer, Ullrich R ^a   Öjefors, Erik ^a   Zhao, Yan ^a  

^a UNIVERSITY OF WUPPERTAL   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BROADBAND WIRELESS COMMUNICATIONS; CHIPSET; GHZ BAND; HIGH-FREQUENCY APPLICATIONS; HIGHLY INTEGRATED; MM-WAVE; OUTPUT POWER; QUADRATURE MODULATION; SIGE BICMOS TECHNOLOGY; TRANSMITTER AND RECEIVER; ZERO IF;

BICMOS TECHNOLOGY; HYDROPHONES; SILICON ALLOYS; TRANSMITTERS; WIRELESS TELECOMMUNICATION SYSTEMS;

SEMICONDUCTING SILICON;

EID: 77952194721     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISSCC.2010.5433832     Document Type: Conference Paper

References (5)

1. H. Rücker, et al., "A 0.13μm SiGe BiCMOS Technology Featuring fT / fMAX of 240 / 330GHz and Gate Delays Below 3ps", IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM, pp. 166-169, 12-14 Oct. 2009.
2. S. Reynolds, e t al.,"Silicon 60GHz receiver and transmitter chipset for broadband communications", IEEE J. Solid-State Circuits, vol. 41, no. 12, pp. 2820-2830, Dec. 2006.
3. A. Natarajan, et al.,"A 77GHz Phased-Array Transmitter with Local LO-Path Phase-Shifting in Silicon", IEEE ISSCC Dig. Tech. Papers, pp. 180-181, Feb., 2006.
4. E. Laskin, et al., "165GHz Transceiver in SiGe Technology", IEEE J. Solid-State Circuits, vol. 43, no. 5, pp. 1087-1100, May 2008.
5. U. Pfeiffer and D. Goren, "A 20dBm Fully-Integrated 60GHz SiGe Power Amplifier with Automatic Level Control", IEEE J. Solid-State Circuits, vol. 42, no. 7, pp. 1455-1463, July 2007.