On-die source-pull for the characterization of the W-band noise performance of 65 nm General Purpose (GP) and Low Power (LP) n-MOSFETs

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2009, Pages 773-776

  Yau, Kenneth H K ^a   Khanpour, Mehdi ^a   Yang, Ming Ta ^b   Schvan, Peter ^c   Voinigescu, Sorin P ^a  

^a UNIVERSITY OF TORONTO   (Canada)

^b QUALCOMM INC   (United States)

^c NORTEL NETWORKS   (Canada)

Author keywords

Millimeter wave devices; Millimeter wave measurements; Noise measurement; Tuners

Indexed keywords

100 GHZ; BAND NOISE; CMOS LNA; CMOS PROCESSS; CMOS SWITCH; DOWN CONVERTERS; EXPERIMENTAL EVIDENCE; GENERAL PURPOSE; LATERAL ELECTRIC FIELD; LOW LOSS; LOW POWER; LOWER NOISE; MILLIMETER WAVE MEASUREMENTS; MOSFET NOISE; MOSFETS; NMOSFETS; NOISE MEASUREMENT; NOISE MEASUREMENTS; OPTIMAL NOISE; RF CMOS TECHNOLOGY; SOURCE-PULL; TECHNOLOGY NODES; TRANSMISSION LINE;

ACOUSTIC IMPEDANCE; ACOUSTIC NOISE MEASUREMENT; AUDIO FREQUENCY AMPLIFIERS; BANDPASS FILTERS; CMOS INTEGRATED CIRCUITS; DIES; ELECTRIC FIELDS; ELECTRIC VARIABLES MEASUREMENT; INSULATING MATERIALS; LOW NOISE AMPLIFIERS; MICROWAVES; MILLIMETER WAVES; MOSFET DEVICES; NOISE FIGURE; SPURIOUS SIGNAL NOISE; TUNERS;

MILLIMETER WAVE DEVICES;

EID: 77949950956     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2009.5165811     Document Type: Conference Paper

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