A 400GHz fMAX fully self-aligned SiGe:C HBT architecture

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2009, Pages 5-8

  Van Huylenbroeck, S ^a   Sibaja Hernandez, A ^a   Venegas, R ^a   You, S ^a,b   Winderickx, G ^a   Radisic, D ^a   Lee, W ^a   Ong, P ^a   Vandeweyer, T ^a   Nguyen, N D ^a   De Meyer, K ^a,b   Decoutere, S ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Hetero junction bipolar transistor (HBT); Millimeter wave bipolar transistor; Silicon bipolar process technology; Silicon germanium (SiGe)

Indexed keywords

FULLY SELF-ALIGNED; HETERO JUNCTION BIPOLAR TRANSISTOR; MILLIMETER-WAVE BIPOLAR TRANSISTOR; SIGE:C-HBT; SILICON BIPOLAR; SILICON GERMANIUM; SINGLE-STEP;

BICMOS TECHNOLOGY; GERMANIUM; HETEROJUNCTION BIPOLAR TRANSISTORS; MILLIMETER WAVE DEVICES; MILLIMETER WAVES; SEMICONDUCTING GERMANIUM COMPOUNDS; SILICON ALLOYS; TECHNOLOGY;

BIPOLAR TRANSISTORS;

EID: 72449174838     PISSN: 10889299     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/BIPOL.2009.5314244     Document Type: Conference Paper

References (4)

1. A. Fox et al, "SiGe HBT Module with 2.5ps Gate Delay", IEDM Technical Digest, pp. 731-734, 2008.
2. T > 400GHz at room temperature", BCTM Proceedings, pp. 121-124, 2008.
3. J. Yuan et al, "On the Performance Limits of Cryogenically Operated SiGe HBTs and Its Relation to Scaling for Terahertz Speeds", IEEE Transactions on Electrical Devices, pp. 1007-1019, 2009.
4. J.J.T.M. Donkers et al, "A Novel Fully Self-Aligned SiGe:C HBT Architecture Featuring a Single-Step Epitaxial Collector-Base Process", IEDM Technical Digest, pp. 655-658, 2007.