SiGe HBT noise parameters extraction using in-situ silicon integrated tuner in MMW range 60 - 110GHz

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2009, Pages 83-86

  Tagro, Y ^a,b   Gloria, D ^a   Boret, S ^a   Lepillet, S ^b   Dambrine, G ^b  

^a STMICROELECTRONICS   (France)

^b INSTITUT D ELECTRONIQUE   (France)

Author keywords

Active devices; HBT; Impedance tuner; In situ lab; Noise measurement

Indexed keywords

ACTIVE DEVICES; BI-CMOS; ELECTRICAL SIMULATION; FREQUENCY RANGES; IMPEDANCE METHOD; IMPEDANCE TUNERS; IN-SITU; NOISE MEASUREMENTS; NOISE PARAMETERS; ON-WAFER; SIGE HBTS; TEST STRUCTURE; TESTED DEVICES;

ACOUSTIC NOISE MEASUREMENT; SEMICONDUCTING GERMANIUM COMPOUNDS; SILICON ALLOYS; SILICON WAFERS;

TUNERS;

EID: 72449135382     PISSN: 10889299     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/BIPOL.2009.5314138     Document Type: Conference Paper

References (4)

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2. G. Dambrine and all, "A new method for On-Wafer Noise Measurement", IEEE Trans. On Microwave Theory & Tech., vol. 41, no. 3, pp. 375-381, March 1993.
3. R. Q. Lane, "The determination of device noise parameters", Proc. Of the IEEE, vol. 57, pp. 1461-1462, August 1969.
4. nd ICMTS Proceeding, pp.184-188, 30-02 March 2009.