Electrical and structural properties of TaN gate electrodes fabricated by wet etching using NH4OH/H2O2 solution and Hf metal hard mask

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 46, Issue 8-11, 2007, Pages

  Sugimoto, Youhei ^a   Yamamoto, Keisuke ^a   Nakashima, Hiroshi ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

Structural properties; TaN metal gate; Wet etching; Work function

Indexed keywords

ANNEALING; CHARGE DENSITY; WET ETCHING; WORK FUNCTION; X RAY PHOTOELECTRON SPECTROSCOPY;

INTERFACIAL LAYER; TAN METAL GATE;

ELECTRODES;

EID: 34547896258     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.L211     Document Type: Article

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