Epitaxial growth of Hf O2 doped Ce O2 thin films on Si(001) substrates for high-κ application

Applied Physics Letters

Volumn 92, Issue 1, 2008, Pages

  Wang, Yi ^a   Wei, Feng ^a   Yue, Shoujing ^a   Yang, Zhimin ^a   Du, Jun ^a  

^a GENERAL RESEARCH INSTITUTE FOR NONFERROUS METALS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CERIUM COMPOUNDS; CURRENT DENSITY; DOPING (ADDITIVES); EPITAXIAL GROWTH; GATE DIELECTRICS; HAFNIUM COMPOUNDS; HIGH ENERGY ELECTRON DIFFRACTION; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; LEAKAGE CURRENTS; PERMITTIVITY; PULSED LASER DEPOSITION; SILICON COMPOUNDS; ULTRAHIGH VACUUM;

CROSS SECTION; GATE BIAS; LEAKAGE CURRENT DENSITY;

EPITAXIAL FILMS;

EID: 38049071424     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2829792     Document Type: Article

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