Molecular beam epitaxy study of a common a-GeO2 interfacial passivation layer for Ge-and GaAs-based MOS heterostructures

Materials Research Society Symposium Proceedings

Volumn 1155, Issue , 2009, Pages 163-168

  Merckling, C ^a   Penaud, J ^b   Bellenger, F ^a,c   Kohen, D ^a   Pourtois, G ^a   Brammertz, G ^a   Scarrozza, M ^a   El Kazzi, M ^d   Houssa, M ^c   Dekoster, J ^a   Caymax, M ^a   Meuris, M ^a   Heyns, M M ^a,c  

^a IMEC   (Belgium)

^b Riber   (France)

^c UNIVERSITY OF LEUVEN   (Belgium)

^d L'Orme des Merisiers   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ADVANCED CMOS; CMOS TECHNOLOGY; ELECTRICAL PASSIVATION; ELECTRICAL PROPERTY; GAAS; GAAS(001); HETEROSTRUCTURES; HIGH MOBILITY; INTERFACIAL PASSIVATION LAYERS; NMOS DEVICES; SUBSTRATE MATERIAL;

CMOS INTEGRATED CIRCUITS; CRYSTAL GROWTH; ELECTRIC PROPERTIES; GALLIUM ALLOYS; GALLIUM ARSENIDE; GERMANIUM; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WIRES;

PASSIVATION;

EID: 77950993826     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)

1. A. Dimoulas et al., Advanced Gate Stacks for High Mobility Semiconductors, Springer (2007)
2. J.P. Locquet et al., J. Appl. Phys. 100, 051610 (2006)
3. C. Merckling et al., Microelec. Eng. 84(9-10), 2243 (2007)
4. C. Merckling et al., Appl. Phys. Lett. 89 (23), 232907 (2006)
5. F. Bellenger et al., ECS Trans. 16(5), 411 (2008)
6. C. Merckling et al., Microelec. Eng., doi:10.1016/j.mee.2009.03.048 (2009)
7. H. Matsubara, T. Sasada, M. Takenaka, and S. Takagi, Appl. Phys. Lett. 93, 032104 (2008)
8. G. Brammertz et al., Appl. Phys. Lett. 93, 183504 (2008);
9. J. Massies, F. Delazy, N.T. Linh, J. Vac. Sci. Technol. 17(5) 1134 (1980)
10. A. Callegari, P.D. Hoh, D.A. Buchanan, D. Lacey, Appl. Phys. Lett. 54(4), 332 (1989)
11. R. Droopad et al., J. Vac. Sci. Technol. B 24, 1479 (2006)
12. P. de Souza et al., Appl. Phys. Lett. 92, 153508 (2008);
13. H.-S. Kim et al., Appl. Phys. Lett. 92, 032907 (2008)
14. J.M. Soler et al., J. Phys. Condens. Matter. 14, 2745 (2002)