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Volumn 20, Issue 7, 2011, Pages 875-881

Dislocations and impurities introduced from etch-pits at the epitaxial growth resumption of diamond

Author keywords

Defects; Diamond growth; Impurities; Luminescence

Indexed keywords

ACTIVE LAYER; BACKGROUND IMPURITIES; CRYSTAL QUALITIES; DIAMOND GROWTH; DIAMOND-BASED ELECTRONIC DEVICES; DOPING CONCENTRATION; ETCH PITS; HIGH DISLOCATION DENSITY; HIGH-POWER; HOMOEPITAXIAL DIAMOND FILMS; LONG LIFETIME; PLASMA-CVD; ROUGHENED SURFACES; THREADING DISLOCATION;

EID: 79960822231     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2011.04.015     Document Type: Article
Times cited : (31)

References (31)
  • 9
    • 79960778451 scopus 로고    scopus 로고
    • G. A. Scarsbrook, P. M. Martineau et al. United States patent No. US 7160617B2 (2007)
    • G. A. Scarsbrook, P. M. Martineau et al. United States patent No. US 7160617B2 (2007)
  • 16
    • 79960775100 scopus 로고    scopus 로고
    • G. A. Scarsbrook, P. M. Martineau et al. United States Patent US 7128974 B2 (2006)
    • G. A. Scarsbrook, P. M. Martineau et al. United States Patent US 7128974 B2 (2006)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.