High crystalline quality single crystal chemical vapour deposition diamond

Journal of Physics Condensed Matter

Volumn 21, Issue 36, 2009, Pages

  Martineau, P M ^a   Gaukroger, M P ^a   Guy, K B ^a   Lawson, S C ^a   Twitchen, D J ^b   Friel, I ^b   Hansen, J O ^c   Summerton, G C ^c   Addison, T P G ^c   Burns, R ^c  

^a DTC Research Centre   (United Kingdom)

^b ELEMENT SIX LTD   (United Kingdom)

^c Element Six   (South Africa)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOUR DEPOSITION; CONCENTRATION OF; CONTROLLED POINT; CRYSTALLINE PERFECTION; CVD SYNTHESIS; DENSITY OF DISLOCATION; DIAMOND MATERIALS; EXTENDED DEFECT; GROWTH SECTORS; GROWTH SURFACES; GUIDE SELECTION; HIGH PRESSURE; HIGH TEMPERATURE; HIGH-CRYSTALLINE QUALITY; HOMOEPITAXIAL; HP-HT SYNTHESIS; HPHT TREATMENT; PHOTOLUMINESCENCE IMAGING; SYNTHETIC SUBSTRATES; TYPE IIA; X-RAY TOPOGRAPHY;

CRYSTALLINE MATERIALS; DEFECTS; DIAMONDS; DISLOCATIONS (CRYSTALS); FIBER OPTIC SENSORS; HIGH PRESSURE ENGINEERING; MOTION CONTROL; POINT DEFECTS; SEMICONDUCTING INDIUM COMPOUNDS; SINGLE CRYSTALS; STACKING FAULTS; SUBSTRATES; SURFACE DEFECTS; SYNTHETIC DIAMONDS;

CHEMICAL VAPOR DEPOSITION;

EID: 70349596126     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/21/36/364205     Document Type: Article

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