Identification of etch-pit crystallographic faces induced on diamond surface by H 2/O 2 etching plasma treatment

Physica Status Solidi (A) Applications and Materials Science

Volumn 206, Issue 9, 2009, Pages 1949-1954

  Achard, J ^a   Silva, F ^a   Brinza, O ^a   Bonnin, X ^a   Mille, V ^a   Issaoui, R ^a   Kasu, M ^b   Gicquel, A ^a  

^a CNRS   (France)

^b NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIAMOND CRYSTALS; DIAMOND SURFACES; DISLOCATION DENSITIES; ETCH PITS; ETCHING PLASMA; GEOMETRICAL MODELS; GROWTH CONDITIONS; HIGH PRESSURE; PIT FORMATION; PLASMA PRE-TREATMENT; POLISHING EFFECTS; POLISHING STEPS; PRE-TREATMENT; SMOOTH SURFACE; THIN-FILM DEPOSITIONS;

CARRIER MOBILITY; DEPOSITION; DISLOCATIONS (CRYSTALS); ELECTRONIC PROPERTIES; PLASMA DEPOSITION; PLASMA ETCHING; PLASMAS; POLISHING; SUBSTRATES; THIN FILMS;

SINGLE CRYSTALS;

EID: 70349111848     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200982210     Document Type: Article

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