Defect analysis and excitons diffusion in undoped homoepitaxial diamond films after polishing and oxygen plasma etching

Diamond and Related Materials

Volumn 18, Issue 10, 2009, Pages 1205-1210

  Volpe, Pierre Nicolas ^a   Muret, Pierre ^a   Omnes, Franck ^a   Achard, Jocelyn ^b   Silva, François ^b   Brinza, Ovidiu ^b   Gicquel, Alix ^b  

^a LABORATOIRE DE CRISTALLOGRAPHIE   (France)

^b CNRS   (France)

Author keywords

Defects; Etching; Excitons; Homoepitaxial diamond films; Luminescence; Polishing

Indexed keywords

AS-GROWN; DEFECT ANALYSIS; DEFECT BANDS; DEFECTS INDUCED; DIAMOND LAYERS; ETCHING PROCESS; EXCITON DIFFUSION LENGTH; FREE EXCITONS; HIGH-POWER; HOMOEPITAXIAL DIAMOND FILMS; LUMINESCENCE SPECTRUM; OXYGEN PLASMA ETCHING; OXYGEN PLASMAS; PHOTON ENERGY; PL SPECTRA; POLISHED SURFACES; PULSED MICROWAVE PLASMA ASSISTED CHEMICAL VAPOUR DEPOSITION; THICK EPITAXIAL;

DEFECTS; DIAMOND CUTTING TOOLS; DIAMONDS; DIFFUSION; ELECTRON BEAMS; EPITAXIAL FILMS; EPITAXIAL LAYERS; EXCITONS; LIGHT; LIGHT EMISSION; MICROWAVES; OXYGEN; PHOTOLUMINESCENCE; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMA ETCHING; PLASMAS; POLISHING; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

DIAMOND FILMS;

EID: 68749092633     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2009.04.008     Document Type: Article

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