Phosphorus incorporation and activity in (100)-oriented homoepitaxial diamond layers

Physica Status Solidi (A) Applications and Materials Science

Volumn 206, Issue 9, 2009, Pages 2000-2003

  Frangieh, G ^a   Pinault, M A ^a   Barjon, J ^a   Tillocher, T ^a   Jomard, F ^a   Chevallier, J ^a  

^a LABORATOIRE DES SCIENCES DU CLIMAT ET DE L ENVIRONNEMENT   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE SPECTROSCOPY; CHEMICAL VAPOR DEPOSITION DIAMOND; GASEOUS PHASE; GROWTH PARAMETERS; HOMOEPITAXIAL DIAMOND LAYERS; HOMOEPITAXIAL GROWTH; KEY PARAMETERS; MICROWAVE PLASMA-ASSISTED CHEMICAL VAPOR DEPOSITION; ORGANIC PRECURSOR; PHOSPHORUS DONOR; PHOSPHORUS INCORPORATION; PHOSPHORUS-DOPED DIAMOND; TERTIARYBUTYLPHOSPHINE;

DIAMOND FILMS; DIAMONDS; EPITAXIAL GROWTH; MICROWAVES; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SECONDARY ION MASS SPECTROMETRY; VAPORS;

PHOSPHORUS;

EID: 70349109627     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200982223     Document Type: Article

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