Growth of thick heavily boron-doped diamond single crystals: Effect of microwave power density

Applied Physics Letters

Volumn 97, Issue 18, 2010, Pages

  Issaoui, R ^a   Achard, J ^a   Silva, F ^a   Tallaire, A ^a   Tardieu, A ^a   Gicquel, A ^a   Pinault, M A ^b   Jomard, F ^b  

^a CNRS   (France)

^b LABORATOIRE DES SCIENCES DU CLIMAT ET DE L ENVIRONNEMENT   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BORON CONCENTRATIONS; BORON DOPED DIAMOND; BORON-DOPED; BORON-DOPING; CONCENTRATION RANGES; DEFECTS FORMATION; DIAMOND SINGLE CRYSTALS; DOPED DIAMONDS; DOPED-DIAMOND FILMS; DOPING EFFICIENCY; GASPHASE; GROWTH CONDITIONS; HEAVILY DOPED; HIGH CURRENT APPLICATIONS; KEY PARAMETERS; MICROWAVE POWER DENSITY; ORDERS OF MAGNITUDE; PLASMA INSTABILITIES; POWER DEVICES;

BORON; CHEMICAL VAPOR DEPOSITION; DIAMOND FILMS; DIAMONDS; DOPING (ADDITIVES); ELECTROMAGNETIC FIELDS; MAGNETIC FIELD EFFECTS; MICROWAVE GENERATION; MICROWAVE POWER TRANSMISSION; MORPHOLOGY; PLASMA DEPOSITION; PLASMA DIAGNOSTICS; PLASMA STABILITY; SURFACE DEFECTS; SYNTHETIC DIAMONDS;

SINGLE CRYSTALS;

EID: 78649274437     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3511449     Document Type: Article

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