Mechanisms of bending of threading dislocations in MOVPE-grown GaN on (0001) sapphire

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue , 2006, Pages 1750-1753

  Datta, R ^a   Humphreys, C J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LEDGE MOVEMENT; SAPPHIRE SUBSTRATE; THREADING DISLOCATIONS; 61.72.BB; 68.55.LN; GROWTH MODES; NEW MECHANISMS; POSSIBLE MECHANISMS; SAPPHIRE SUBSTRATES; STEP FORMATION; THREADING DISLOCATION;

CRYSTAL GROWTH; CRYSTAL STRUCTURE; DEPOSITION; GALLIUM NITRIDE; SAPPHIRE; SILICON NITRIDE; THREE DIMENSIONAL COMPUTER GRAPHICS;

DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE;

EID: 33746337300     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200565369     Document Type: Conference Paper

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