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Surface Science

Volumn 513, Issue 3, 2002, Pages 475-484

C incorporation and segregation during Si1-yCy/Si(0 0 1) gas-source molecular beam epitaxy from Si2H6 and CH3SiH3

(6) Foo, Y L a Bratland, K A a Cho, B a Soares, J A N T a Desjardins, P a Greene, J E a

a University of Illinois at Urbana Champaign (United States)

Author keywords

Alloys; Carbon; Epitaxy; Silicon; Surface segregation; Thermal desorption spectroscopy

Indexed keywords

ACTIVATION ENERGY; ADSORPTION; CARBON; CHARGE TRANSFER; CHEMICAL BONDS; HIGH TEMPERATURE EFFECTS; MIXTURES; MOLECULAR BEAM EPITAXY; REACTION KINETICS; SEGREGATION (METALLOGRAPHY); SILICON WAFERS; SPECTROSCOPIC ANALYSIS; SURFACE CHEMISTRY; TEMPERATURE PROGRAMMED DESORPTION;

THERMAL DESORPTION SPECTROSCOPY;

SILICON ALLOYS;

EID: 0036679918 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(02)01821-6 Document Type: Article

Times cited : (11)

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