Temperature-dependent carbon incorporation into the Si 1-y C y film during gas-source molecular beam epitaxy using monomethylsilane

Applied Surface Science

Volumn 252, Issue 10, 2006, Pages 3692-3696

  Konno, A ^a   Senthil, K ^a   Murata, T ^a   Suemitsu, M ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Carbon incorporation; MIR FT IR; Monomethylsilane; SiC; Surface hydrogen; TPD

Indexed keywords

ABSORPTION; CARBON; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MOLECULAR BEAM EPITAXY; SURFACE CHEMISTRY; TEMPERATURE DISTRIBUTION; TEMPERATURE PROGRAMMED DESORPTION; THIN FILMS;

CARBON INCORPORATION; MIR-FT-IR; MONOMETHYLSILANE; SURFACE HYDROGEN;

SILICON CARBIDE;

EID: 32644484907     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2005.05.052     Document Type: Article

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