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Volumn 49, Issue 1 Part 2, 2010, Pages

Band-bending at the graphene-sic interfaces: Effect of the substrate

(8) Chen, Wei a Chen, Shi a Ni, Zhen Hua b Huang, Han a Qi, Dong Chen a Gao, Xing Yu a Shen, Ze Xiang b Wee, Andrew Thye Shen a

a NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

b NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BANDBENDING; IN-SITU SYNCHROTRONS; INTERFACE PROPERTY; LOW-TEMPERATURE SCANNING TUNNELING MICROSCOPY; PHOTOEMISSION SPECTROSCOPY; SIC SUBSTRATES; SURFACE POLARITIES;

EMISSION SPECTROSCOPY; GRAPHENE; GRAPHITE; RAMAN SPECTROSCOPY; SCANNING TUNNELING MICROSCOPY;

SILICON CARBIDE;

EID: 77950838479 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.49.01AH05 Document Type: Article

Times cited : (15)

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