Temperature dependent structural changes of graphene layers on 6H-SiC(0001) surfaces

Journal of Physics Condensed Matter

Volumn 20, Issue 22, 2008, Pages

  Kim, Ki Jeong ^a,b   Lee, Hangil ^a   Choi, J H ^b   Lee, H K ^c   Kang, T H ^a   Kim, B ^a,c   Kim, Sehun ^b  

^a POSTECH   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^c Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; LOW ENERGY ELECTRON DIFFRACTION; SILICON CARBIDE; THERMAL EFFECTS; X RAY ABSORPTION NEAR EDGE STRUCTURE SPECTROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

CORE LEVEL PHOTOEMISSION SPECTROSCOPY (CLPES); GRAPHENE LAYERS;

OLEFINS;

EID: 44449174123     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/20/22/225017     Document Type: Article

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