Effect of H2 Content on Reliability of Ultrathin In-Situ Steam Generated (ISSG) SiO2

IEEE Electron Device Letters

Volumn 21, Issue 9, 2000, Pages 430-432

  Luo, T Y ^a   Laughery, M ^a   Brown, G A ^a   Al Shareef, H N ^a   Watt, V H C ^a   Karamcheti, A ^a   Jackson, M D ^a   Huff, H R ^a  

^a SEMATECH   (United States)

Author keywords

Charge to breakdown; in situ steam generated (ISSG) oxide; Si dangling bonds; SILC; structural transition layer

Indexed keywords

EID: 85008025347     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.863100     Document Type: Article

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