Co Six contact resistance after etching and ashing plasma exposure

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 27, Issue 4, 2009, Pages 844-848

  Katahira, Ken ^a   Fukasawa, Masanaga ^a   Kobayashi, Shoji ^a   Takizawa, Toshifumi ^b   Isobe, Michio ^b   Hamaguchi, Satoshi ^b   Nagahata, Kazunori ^a   Tatsumi, Tetsuya ^a  

^a SONY CORPORATION   (Japan)

^b OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ASHING PLASMA; ASHING PROCESS; DEEP OXIDATION; ETCHING PROCESS; ION ENERGIES; ION PENETRATION; ION SPECIES; IONS PENETRATE; LINEAR RELATIONSHIPS; MASS NUMBERS; MOLECULAR DYNAMICS SIMULATIONS; PLASMA PROCESS; RESISTANCE FLUCTUATION; RESISTANCE INCREASE;

CONTACT RESISTANCE; MOLECULAR DYNAMICS; OXIDATION; PLASMA ETCHING; PLASMAS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES; SILICON;

IONS;

EID: 67650337572     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3130146     Document Type: Article

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