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Applied Physics Letters

Volumn 95, Issue 21, 2009, Pages

High spontaneous emission rate asymmetrically graded 480 nm InGaN/GaN quantum well light-emitting diodes

(9) Wang, Lei a Li, Rui a Yang, Ziwen a Li, Ding a Yu, Tao a Liu, Ningyang a Liu, Lei a Chen, Weihua a Hu, Xiaodong a

a PEKING UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER DENSITY; GROWTH DIRECTIONS; INGAN/GAN QUANTUM WELL; MATRIX ELEMENTS; PIEZO-ELECTRIC FIELDS; QUANTUM CONFINED STARK EFFECT; SPONTANEOUS EMISSION RATES;

LIGHT EMITTING DIODES; PARTICULATE EMISSIONS; RARE EARTH COMPOUNDS; SPECTROSCOPY; SPONTANEOUS EMISSION; WAVE FUNCTIONS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 71549170211 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3266866 Document Type: Article

Times cited : (33)

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