Characteristics of CVD graphene nanoribbon formed by a ZnO nanowire hardmask

Nanotechnology

Volumn 22, Issue 29, 2011, Pages

  Kang, Chang Goo ^a   Kang, Jang Won ^a   Lee, Sang Kyung ^a   Lee, Seung Yong ^a   Cho, Chun Hum ^a   Hwang, Hyeon Jun ^a   Lee, Young Gon ^a   Heo, Jinseong ^b   Chung, Hyun Jong ^b   Yang, Heejun ^b   Seo, Sunae ^c   Park, Seong Ju ^a   Ko, Ki Young ^d   Ahn, Jinho ^d   Lee, Byoung Hun ^a,d  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^c Sejong University   (South Korea)

^d Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BASIC STRUCTURE; FIELD-EFFECT MOBILITIES; GRAPHENE NANO-RIBBON; HARDMASKS; HIGH DENSITY; HIGH YIELD; LOW TEMPERATURES; MOSFETS; PATTERNING PROCESS; TOPDOWN; ZNO NANOWIRES; CVD GRAPHENE; GATE VOLTAGES; GRAPHENE NANORIBBON (GNR);

ATOMIC LAYER DEPOSITION; DRAIN CURRENT; IODINE; MOSFET DEVICES; NANOWIRES; ZINC OXIDE; GRAPHENE;

GRAPHENE; NANORIBBONS;

EID: 79960459865     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/29/295201     Document Type: Article

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