High-resolution x-ray diffraction investigation of relaxation and dislocations in SiGe layers grown on (001), (011), and (111) Si substrates

Journal of Applied Physics

Volumn 109, Issue 12, 2011, Pages

  Zhylik, A ^a   Benediktovich, A ^a   Ulyanenkov, A ^b   Guerault, H ^b   Myronov, M ^c   Dobbie, A ^c   Leadley, D R ^c   Ulyanenkova, T ^d  

^a BELARUSIAN STATE UNIVERSITY   (Belarus)

^b BRUKER AXS GMBH   (Germany)

^c UNIVERSITY OF WARWICK   (United Kingdom)

^d KARLSRUHE INSTITUTE OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLOGRAPHIC TILT; DATA SETS; DIFFUSE X-RAY SCATTERING; GE CONCENTRATIONS; HIGH RESOLUTION X RAY DIFFRACTION; MULTI-LAYERED; RECIPROCAL SPACE MAPPING; RECIPROCAL SPACE MAPS; REDUCED PRESSURE CHEMICAL VAPOR DEPOSITION; SI SUBSTRATES; SIGE LAYERS; THREADING DISLOCATION DENSITIES;

CHEMICAL VAPOR DEPOSITION; DIFFRACTION; GERMANIUM; HETEROJUNCTIONS; SILICON; SINGLE CRYSTALS; X RAY DIFFRACTION; X RAY SCATTERING;

X RAY DIFFRACTION ANALYSIS;

EID: 79960195317     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3597828     Document Type: Article

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